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40V 90A Nce4090g Nce N-Channel Enhancement Mode Power Mosfet with Dfn5X6-8L
[May 11, 2024]
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process ...
250V 90A Ncep025f90t Nce N-Channel Super Trench Power Mosfet with to-247
[May 11, 2024]
Detailed Photos Product Description NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent ...
600V 20A Nce20th60bp Diodes Transistors Triodes Thyristors Trench Fs II Fast IGBT
[May 11, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...
-100V -13A Nce01p13K Nce P-Channel Enhancement Mode Power Mosfet Transistor with to-252-2L
[May 10, 2024]
Detailed Photos Product Description NCE provides N-type 12V~200V and P-type 12V~150V Trench power MOSFETs, adopting advanced process manufacturing technology, better process ...
Nce65TF099t N-Channel Super Junction Power Mosfet
[May 08, 2024]
Detailed Photos Product Description NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent ...
650V Nce65TF078t N-Channel Super Junction Power Mosfet Transistor with to-247
[May 08, 2024]
Detailed Photos Product Description NCE provides N-channel SGT-I series power MOSFETs with breakdown voltage levels ranging from 30V to 250V. NCE's technology and excellent ...
Nce40td120bt 1200V 40A Trench Fs II Fast IGBT with to-247
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure ...
Nce25td120bt 1200V 25A Trench Fs II Fast IGBT
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure optimization, ...
Nce15td120bt 1200V 15A Trench Fs II Insulated Gate Bipolar Transistors Fast IGBT
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure ...
Nce20td60bf 600V 20A Trench Fs II Fast IGBT
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...
Nce15td60b 600V 15A Trench Fs II Fast IGBT with to-220
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...
600V 10A Nce10td60bf Nce10td60bd Nce10td60b Trench Fs II Fast IGBT
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...
Nce20td60bp 600V 20A Trench Fs II Fast IGBT with to-3p
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...
Ncepower Brand Nce80td60bt 600V 80A Trench Fs II Fast IGBT with to-247
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure ...
Nce20td60bt Nce20td60bp 600V 20A Trench Fs II Fast IGBT with to-247
[May 08, 2024]
Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...
