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Product List

9721.

2sp0320V2a0-17 Adv Active Clamping Short Circuit Soft Shutdown 1700 V Scale ™ -2 Driver

Open Details in New Window [Sep 08, 2023]

MODEL: 2SD300C17A2 2SP0320V2A0-12/17 Power Integrations Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate ...

Company: Shenzhen Botong Electric Co., Ltd.

9722.

Fz1500r33hl3 Self Limiting Short Curcuit Current IGBT Module with Alsic Base Plate for Increased ...

Open Details in New Window [Sep 01, 2023]

MODEL: FZ1000R33HE3 FZ1500R33HE3 FZ1500R33HL3 Infineon IHV B 3300 V, 1500 A 190 mm single-switch IGBT Module with TRENCHSTOP™ IGBT 3, low switching losses and Emitter ...

Company: Shenzhen Botong Electric Co., Ltd.

9723.

FF900r17me7p-B11 IGBT Module of Infineon with Compact and Robust Design with Molded Terminals

Open Details in New Window [Aug 29, 2023]

MODEL: FF750R12ME7_B11 FF900R12ME7-B11 FF900R17ME7P-B11 Infineon EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC, ...

Company: Shenzhen Botong Electric Co., Ltd.

9724.

FF900r12me7-B11 1200 V, 900 a Dual Trenchstop™ IGBT7 Module with Emitter Controlled 7 Diode

Open Details in New Window [Aug 29, 2023]

MODEL: FF750R12ME7_B11 FF900R12ME7-B11 FF900R17ME7P-B11 Infineon EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and ...

Company: Shenzhen Botong Electric Co., Ltd.

9725.

FF600r12me4 600 a Dual IGBT Module with Trenchstop Diode for PV and UPS

Open Details in New Window [Aug 24, 2023]

Parametrics FF600R12ME4 Configuration Dual Dimensions (width) 62 mm Dimensions (length) 152 mm Features Solder Pin Housing EconoDUAL™ 3 IC(nom) / IF(nom) 600 A IC ...

Company: Shenzhen Botong Electric Co., Ltd.

9726.

FF900r12IP4 High Short Circuit Capability, Self Limiting Short Circuit Current Diode IGBT for ...

Open Details in New Window [Aug 24, 2023]

MODEL: FF600R12IE4 FF900R12IE4 FF900R12IP4 FF1400R12IP4 Infineon PrimePACK™ 2 1200 V, 900 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled ...

Company: Shenzhen Botong Electric Co., Ltd.

9727.

2SD300c17A2 30 a Gate Current and 2 X 4 W Drive Power for IGBT Calculated Mtbf

Open Details in New Window [Sep 08, 2023]

MODEL: 2SD300C17A2 2SP0320V2A0-12/17 Power Integrations Dual-channel SCALE-2 driver core, highest integration level, second source for Infineon™ 2ED300C17-S, 30 A gate ...

Company: Shenzhen Botong Electric Co., Ltd.

9728.

1sp0635V2m1-17 Drive 130 X 140 mm and 190 X 140 mm High-Voltage and High-Power IGBT

Open Details in New Window [Sep 08, 2023]

MODEL: 1SP0635V2M1-17 Power Integrations 1SP0635 SCALE-2 Plug-and-Play drivers safely and reliably drive 130 x 140 mm and 190 x 140 mm high-voltage and high-power IGBT modules ...

Company: Shenzhen Botong Electric Co., Ltd.

9729.

Nce20td60bt Nce20td60bp 600V 20A Trench Fs II Fast IGBT with to-247

Open Details in New Window [Feb 26, 2025]

Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...

Company: SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

9730.

Nce40td120bt 1200V 40A Trench Fs II Fast IGBT with to-247

Open Details in New Window [Feb 26, 2025]

Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure ...

Company: SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

9731.

600V 20A Nce20th60bp Diodes Transistors Triodes Thyristors Trench Fs II Fast IGBT

Open Details in New Window [Feb 26, 2025]

Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...

Company: SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

9732.

Nce15td120bt 1200V 15A Trench Fs II Insulated Gate Bipolar Transistors Fast IGBT

Open Details in New Window [Feb 26, 2025]

Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure ...

Company: SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

9733.

Nce25td120bt 1200V 25A Trench Fs II Fast IGBT

Open Details in New Window [Feb 26, 2025]

Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure optimization, ...

Company: SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

9734.

1200V 100A Nce100td120vtp4 Trench Fs II Fast IGBT with to-247p-4L

Open Details in New Window [Feb 26, 2025]

Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 1200V to 1350V. Through process and device structure ...

Company: SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

9735.

Original Nce80td65bt 650V 80A Trench Fs II Fast IGBT with to-247

Open Details in New Window [Feb 26, 2025]

Detailed Photos Product Description NCE offers N-channel IGBT devices with breakdown voltage levels ranging from 600V to 650V. With Injection Enhance (IE) and Field Stop (FS) ...

Company: SHENZHEN HEYLOO ELECTRONIC TECHNOLOGY CO., LTD

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